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DCR4500A42
Phase Control Thyristor Preliminary Information
DS5942-1.0 June 2009 (LN 26810)
FEATURES
Double Side Cooling High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4500A 60800A 2000V/s 200A/s
APPLICATIONS
High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS
Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V 4200 4000 3600 Conditions
* Higher dV/dt selections available
DCR4500A42* DCR4500A40 DCR4500A36
Tvj = -40 to 125 C C, IDRM = IRRM = 300mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively
Lower voltage grades available. o o *4100V @ -40 C, 4200V @ 0 C
Outline type code: A (See Package Details for further information)
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR4500A42
Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order.
Fig. 1 Package outline
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DCR4500A42
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60 unless stated otherwise C
Symbol Double Side Cooled IT(AV) IT(RMS) IT
Parameter
Test Conditions
Max.
Units
Mean on-state current RMS value Continuous (direct) on-state current
Half wave resistive load -
4500 7068 6330
A A A
SURGE RATINGS
Symbol ITSM It
2
Parameter Surge (non-repetitive) on-state current I t for fusing
2
Test Conditions 10ms half sine, Tcase = 125 C VR = 0
Max. 60.8 18.48
Units kA MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - junction to case Test Conditions Double side cooled Single side cooled DC Anode DC Cathode DC Rth(c-h) Thermal resistance - case to heatsink Clamping force 83.0kN (with mounting compound) Tvj Virtual junction temperature On-state (conducting) Reverse (blocking) Tstg Fm Storage temperature range Clamping force Double side Single side Min. -55 74.0 Max. 0.00603 0.01024 0.01467 0.001 0.002 135 125 125 91.0 Units C/W C/W C/W C/W C/W C C C kN
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DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt
Parameter Peak reverse and off-state current Max. linear rate of rise of off-state voltage Rate of rise of on-state current
Test Conditions At VRRM/VDRM, Tcase = 125 C To 67% VDRM, Tj = 125 gate open C, From 67% VDRM to 2x IT(AV) Gate source 30V, 10 , tr < 0.5s, Tj = 125 C
Repetitive 50Hz Non-repetitive
Min. -
Max. 300 2000 200 500
Units mA V/s A/s A/s
VT(TO)
Threshold voltage - Low level Threshold voltage - High level
500 to 2200A at Tcase = 125 C 2200 to 8000A at Tcase = 125 C 500A to 2200A at Tcase = 125 C 2200A to 8000A at Tcase = 125 C VD = 67% VDRM, gate source 30V, 10 tr = 0.5s, Tj = 25 C
-
0.75 0.92 0.205 0.122 3
V V m m s
rT
On-state slope resistance - Low level On-state slope resistance - High level
tgd
Delay time
tq
Turn-off time
IT = 5000A, Tj = 125 C, VR = 200V, dI/dt = 5A/s, dVDR/dt = 20V/s linear
900
s
QS
Stored charge IT = 3000A, Tj = 125 dI/dt - 1A/s, C, VRpeak ~2500V, VR ~ 1700V
2920
4875
C
IRR
Reverse recovery current
42
57
A
IL
Latching current
Tj = 25 VD = 5V C,
-
3
A
IH
Holding current
Tj = 25 RG-K = , ITM = 500A, IT = 5A C,
-
300
mA
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DCR4500A42
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT VGD IGT IGD
Parameter Gate trigger voltage Gate non-trigger voltage Gate trigger current Gate non-trigger current
Test Conditions VDRM = 5V, Tcase = 25 C At 50% VDRM, Tcase = 125 C VDRM = 5V, Tcase = 25 C At 50% VDRM, Tcase = 125 C
Max. 1.5 0.4 300 10
Units V V mA mA
CURVES
9000 8000 - (A) 7000 6000 5000 4000 3000 2000 1000 0 0.5 1 1.5 2 Instantaneous on-state voltage V T - (V) Vtm Vtm Vtm Vtm max 125C min 125C max 25C min 25C
VTM EQUATION VTM = A + Bln (IT) + C.IT+D. IT
Instantaneous on-state current I
Fig.2 Maximum & minimum on-state characteristics
F
Where
A = -0.208640 B = 0.171688 C = 0.000113 D = 0.003842 these values are valid for Tj = 125 for IT 500A to 8000A C
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10 180 120 90 60 30
130 120 ( oC ) 110 100 90 80 70 60 50 40 30 20 10 180 120 90 60 30
8 Mean power dissipation - (kW)
6
4
2
Maximum case temperature, T
case
0 0 500 1000 1500 Mean on-state current, IT(AV) - (A) 2000
0 0 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation - sine wave
Fig.4 Maximum permissible case temperature, double side cooled - sine wave
125 Maximum heatsink temperature, T Heatsink - ( C) 180 120 90 60 30 16 14 Mean power dissipation - (kW) 12 10 8 6 4 2 0 0 0 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) 0 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) d.c. 180 120 90 60 30
100
75
50
25
Fig.5 Maximum permissible heatsink temperature, double side cooled - sine wave
Fig.6 On-state power dissipation - rectangular wave
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DCR4500A42
SEMICONDUCTOR
125 Maximum permissible case temperature , T case -( C)
125
100
Maximum heatsink temperature T heatsink -(o C)
100
75
75
50 d.c. 180 120 90 60 30 0 1000 2000 3000 4000 5000
50 d.c. 180 120 90 60 30 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) 5000
25
25
0 Mean on-state current, IT(AV) - (A)
0
Fig.7 Maximum permissible case temperature, double side cooled - rectangular wave
Fig.8 Maximum permissible heatsink temperature, double side cooled - rectangular wave
Ri ( C/kW) Ti (s) Ri ( C/kW) Ti (s) Ri ( C/kW) Ti (s) 1 3.01541 2 3 4 1.048955 0.983519 0.983519 0.059 0.059 0.059 0.205916 0.08069
16 Double side cooled
Double side cooled Anode side cooled Cathode side cooled
0.703874 1.904794 2.69023 13.79162
3.156003 4.092806 1.556555 1.623962 7.077369 3.483481 1.745839 2.634274 6.648601 8.436484 1.762119
Transient Thermal Impedance - Zth (C/kW)
14 12
Anode side cooled Cathode side cooled
i4
10 8 6 4 2 0 0.001
Z th
i1
[ Ri (1 exp(T / Ti )]
ARth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c.
Double side cooling AZth (z) A sine. rect. 180 0.44 0.31 120 0.49 0.43 90 0.55 0.49 60 0.60 0.55 30 0.64 0.61 15 0.66 0.64 Anode Side Cooling AZth (z) A sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.61 0.58 15 0.62 0.61 Cathode Sided Cooling AZth (z) A sine. rect. 180 0.42 0.30 120 0.47 0.41 90 0.52 0.46 60 0.57 0.52 30 0.60 0.58 15 0.62 0.60
0.01
0.1 Time (s)
1
10
100
Fig.9 Maximum (limit) transient thermal impedance - junction to case ( C/kW)
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200
30 27 24 It
2
100
180 160 Surge current, ITSM - (kA)
Surge current, I TSM- (kA)
140 120 100 80 60 40 20 0 Conditions: Tcase= 125 C VR = 0 half-sine wave 1 10 ITSM
21 I2t (MA2s) 18 15 12 9 6 3 0 100
10
Conditions: Tcase = 125 C VR =0 Pulse width = 10ms 1 1 10 Number of cycles 100
Pulse width, tP - (ms)
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
25000 Qs max = 4874.7*(di/dt) 20000 Stored charge, Qs - (uC)
0.4822
700 IRR max = 57.242*(di/dt)0.7466 600 Reverse recovery current, IRR - (A)
500
15000
400
10000
Qs min = 2920.8*(di/dt) 0.581 Conditions: Tj = 125C, VR peak ~ 2500V VRM ~ 1700V snubber as required to control reverse voltage
300
IRR min = 41.99*(di/dt)0.7893 Conditions: Tj = 125C, VR peak ~ 2500V VRM ~ 1700V snubber as required to control reverse voltage
200
5000
100
0 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us)
0 0 5 10 15 20 25 30 Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge
Fig.13 Reverse recovery current
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DCR4500A42
SEMICONDUCTOR
10 9
Pulse Width us 100 200 500 1000 10000 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 -
Gate trigger voltage, VGT - (V)
8 7 6 5 4 3 2 1 0 0
400 150 125 100 25 -
Upper Limit
Preferred gate drive area
Tj = 125 C
o
Tj = 25oC
Tj = -40oC
Lower Limit
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Gate trigger current IGT, - (A)
Fig14 Gate Characteristics
30
Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C
25
Gate trigger voltage, VGT - (V)
20
15
10
5
0 0 1 2 3 4 5 6 7 8 9 10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: A
Fig.16 Package outline
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DCR4500A42
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500 Fax: +44(0)1522 500550 CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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